Backside Grinding Backside Metal

To improve chip heat dissipation and conductivity by wafer thinning and wafer backside sputtering technology.


  1. Wafer Size: 12-inch(300mm), 8-inch(200mm)
  2. Metal: Ti/ NiV/ Ag; Ti/Cu, layer thickness could be adjusted to fit demand.
  3. Thinning ability: 12 inch wafer : Min. 175 um, 8inch wafer: Min. 150 um.
  4. Enhance metal adhesion by sputtering process.
  5. Provide Bumping (SnAg Bump), RDL (Cu/Ni/Au Redistribution Layer) and SFM (Solderable Front Side Metal) service as per customer request.


  1. Power IC, Power Mosfet, IGBT, 3D IC, LED…

BGBM Process Flow